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Journal: Nanomaterials, 2022
Volume: 12
Number: 4021

Article: A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C
Authors: by Cong Peng, Huixue Huang, Meng Xu, Longlong Chen, Xifeng Li and Jianhua Zhang
Link: https://www.mdpi.com/2079-4991/12/22/4021

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