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Journal: NanomaterialsVolume: 12Number: 4021
Article: A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C
- Authors:
- Cong Peng,
- Huixue Huang and
- Meng Xu
- et al.
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