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Journal: Nanomaterials, 2022
Volume: 12
Number: 3496
3496
Article: In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD
Authors: by Alica Rosová, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann and Ján Kuzmík
Link: https://www.mdpi.com/2079-4991/12/19/3496

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