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Journal: Nanomaterials, 2022
Volume: 12
Number: 3496
Article:
In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD
Authors:
by
Alica Rosová, Edmund Dobročka, Peter Eliáš, Stanislav Hasenöhrl, Michal Kučera, Filip Gucmann and Ján Kuzmík
Link:
https://www.mdpi.com/2079-4991/12/19/3496
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