Next Article in Journal
Dose Enhancement for the Flattening-Filter-Free and Flattening-Filter Photon Beams in Nanoparticle-Enhanced Radiotherapy: A Monte Carlo Phantom Study
Previous Article in Journal
Design of Experiments-Assisted Development of Clotrimazole-Loaded Ionic Polymeric Micelles Based on Hyaluronic Acid
Previous Article in Special Issue
Fly Ash, from Recycling to Potential Raw Material for Mesoporous Silica Synthesis
Open AccessArticle

Morphological, Optical, and Electrical Properties of p-Type Nickel Oxide Thin Films by Nonvacuum Deposition

1
Department of Electronic Engineering, Kao Yuan University, Kaohsiung 821, Taiwan
2
Department of Applied Science, National Taitung University, Taitung 950, Taiwan
3
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(4), 636; https://doi.org/10.3390/nano10040636
Received: 9 March 2020 / Revised: 26 March 2020 / Accepted: 26 March 2020 / Published: 29 March 2020
In this study, a p-type 2 at% lithium-doped nickel oxide (abbreviation L2NiO) solution was prepared using Ni(NO3)2·6H2O, and LiNO3·L2NiO thin films were deposited using an atomizer by spraying the L2NiO solution onto a glass substrate. The sprayed specimen was heated at a low temperature (140 °C) and annealed at different high temperatures and times. This method can reduce the evaporation ratio of the L2NiO solution, affording high-order nucleating points on the substrate. The L2NiO thin films were characterized by X-ray diffraction, scanning electron microscopy, UV–visible spectroscopy, and electrical properties. The figure of merit (FOM) for L2NiO thin films was calculated by Haacke’s formula, and the maximum value was found to be 5.3 × 10−6 Ω−1. FOM results revealed that the L2NiO thin films annealed at 600 °C for 3 h exhibited satisfactory optical and electrical characteristics for photoelectric device applications. Finally, a transparent heterojunction diode was successfully prepared using the L2NiO/indium tin oxide (ITO) structure. The current–voltage characteristics revealed that the transparent heterojunction diode exhibited rectifying properties, with a turn-on voltage of 1.04 V, a leakage current of 1.09 × 10−4 A/cm2 (at 1.1 V), and an ideality factor of n = 0.46. View Full-Text
Keywords: lithium-doped nickel oxide; non-vacuum deposition; figure of merit; heterojunction diode lithium-doped nickel oxide; non-vacuum deposition; figure of merit; heterojunction diode
Show Figures

Figure 1

MDPI and ACS Style

Diao, C.-C.; Huang, C.-Y.; Yang, C.-F.; Wu, C.-C. Morphological, Optical, and Electrical Properties of p-Type Nickel Oxide Thin Films by Nonvacuum Deposition. Nanomaterials 2020, 10, 636.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Search more from Scilit
 
Search
Back to TopTop