Next Article in Journal
On the n-Dimensional Phase Portraits
Next Article in Special Issue
Toward Ultra-Low Efficiency Droop in C-Plane Polar InGaN Light-Emitting Diodes by Reducing Carrier Density with a Wide InGaN Last Quantum Well
Previous Article in Journal
A Study on the Application of Rock Asphalt from Sichuan China Based on Anti-Rutting Performance
Previous Article in Special Issue
Enhanced Device Performance of GaInN-Based Green Light-Emitting Diode with Sputtered AlN Buffer Layer
 
 

Order Article Reprints

Journal: Appl. Sci., 2019
Volume: 9
Number: 871

Article: Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes
Authors: by Abu Bashar Mohammad Hamidul Islam, Dong-Soo Shim and Jong-In Shim
Link: https://www.mdpi.com/2076-3417/9/5/871

MDPI offers high quality article reprints with convenient shipping to destinations worldwide. Each reprint features a 270 gsm bright white cover and 105 gsm premium white paper, bound with two stitches for durability and printed in full color. The cover design is customized to your article and designed to be complimentary to the journal.

Order Cost and Details

Shipping Address

Billing Address

Notes or Comments

Validate and Place Order

The order must be prepaid after it is placed

req denotes required fields.
Back to TopTop