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Journal: Appl. Sci., 2019
Volume: 9
Number: 871
Article:
Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes
Authors:
by
Abu Bashar Mohammad Hamidul Islam, Dong-Soo Shim and Jong-In Shim
Link:
https://www.mdpi.com/2076-3417/9/5/871
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