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Article

Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers

1
Center for Photonics and Quantum Materials, Skolkovo Institute of Science and Technology, Bolshoy Boulevard 30, bld. 1, 121205 Moscow, Russia
2
Valiev Institute of Physics and Technology, Russian Academy of Sciences, Yaroslavl Branch, Universitetskaya 21, 150007 Yaroslavl, Russia
3
National Research Centre “Kurchatov Institute”, pl. Akademika Kurchatova 1, 123182 Moscow, Russia
4
Moscow Institute of Physics and Technology (State University), MIPT, Institutskiy per. 9, Dolgoprudny, 141701 Moscow Region, Russia
5
Faculty of Physics, M. V. Lomonosov Moscow State University, Leninskie Gory 1, 119991 Moscow, Russia
*
Author to whom correspondence should be addressed.
Appl. Sci. 2019, 9(22), 4725; https://doi.org/10.3390/app9224725
Received: 1 October 2019 / Revised: 29 October 2019 / Accepted: 2 November 2019 / Published: 6 November 2019
(This article belongs to the Special Issue Light Matter Interaction at Nanoscale: What Matters Most)
Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation of distinct ellipsoidal-shaped nanocrystals. Complete intermixing of multilayered film accompanied by an increase of nanocrystal mean size for annealing temperature as high as 1250 °C is shown. Near-IR photoluminescence with the peak at around 1.3–1.4 eV is detected and associated with quantum confined excitons in Si nanocrystals: Photoluminescence maximum is red shifted upon an increase of nanocrystal mean size, while the measured decay time is of order of microsecond. The position of photoluminescence peak as compared to the one for Si nanocrystals in SiO2 matrix is discussed. View Full-Text
Keywords: nanocrystals; silicon; superlattice; photoluminescence; X-ray diffraction; HRTEM; EFTEM; XPS nanocrystals; silicon; superlattice; photoluminescence; X-ray diffraction; HRTEM; EFTEM; XPS
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MDPI and ACS Style

Zhigunov, D.M.; Popov, A.A.; Chesnokov, Y.M.; Vasiliev, A.L.; Lebedev, A.M.; Subbotin, I.A.; Yakunin, S.N.; Shalygina, O.A.; Kamenskikh, I.A. Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers. Appl. Sci. 2019, 9, 4725. https://doi.org/10.3390/app9224725

AMA Style

Zhigunov DM, Popov AA, Chesnokov YM, Vasiliev AL, Lebedev AM, Subbotin IA, Yakunin SN, Shalygina OA, Kamenskikh IA. Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers. Applied Sciences. 2019; 9(22):4725. https://doi.org/10.3390/app9224725

Chicago/Turabian Style

Zhigunov, D. M.; Popov, A. A.; Chesnokov, Yu. M.; Vasiliev, A. L.; Lebedev, A. M.; Subbotin, I. A.; Yakunin, S. N.; Shalygina, O. A.; Kamenskikh, I. A. 2019. "Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers" Appl. Sci. 9, no. 22: 4725. https://doi.org/10.3390/app9224725

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