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Journal: Appl. Sci., 2019
Volume: 9
Number: 3610

Article: Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
Authors: by In-Tae Hwang, Kyu-Won Jang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Jin-Mo Yang, Ho-Sang Kwon and Hyun-Seok Kim
Link: https://www.mdpi.com/2076-3417/9/17/3610

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