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Journal: Applied SciencesVolume: 9Number: 3610
Article: Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
  • Authors:
  • In-Tae Hwang1,
  • Kyu-Won Jang1 and
  • Hyun-Jung Kim1
  • et al.
Link: https://www.mdpi.com/2076-3417/9/17/3610

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