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Peer-Review Record

Theoretical Investigation of Responsivity/NEP Trade-off in NIR Graphene/Semiconductor Schottky Photodetectors Operating at Room Temperature

Appl. Sci. 2021, 11(8), 3398; https://doi.org/10.3390/app11083398
by Teresa Crisci 1,2, Luigi Moretti 1 and Maurizio Casalino 2,*
Reviewer 1: Anonymous
Reviewer 2: Anonymous
Appl. Sci. 2021, 11(8), 3398; https://doi.org/10.3390/app11083398
Submission received: 4 March 2021 / Revised: 7 April 2021 / Accepted: 8 April 2021 / Published: 10 April 2021
(This article belongs to the Special Issue Recent Advances and Future Trends in Nanophotonics)

Round 1

Reviewer 1 Report

This manuscript theoretically discussed the responsivity/noise equivalent power (R/NEP) of NIR graphene/semiconductor Schottky PDs at room temperature. The authors derived a mathematical expression of the Schottky barrier height (SBH) to maximize the R/NEP of some of the graphene/semiconductor junctions. Based on the predictions from their theory, the authors pointed out that Si and Ge could optimized graphene Schottky PD to detect wavelengths. They discovered that graphene/n-Si Schottky PDs maximized responsivity/NEP ratio show responsivity and NEP of 133mA/W and 500fW/sqrt(Hz), respectively, at 1.55μm by a reverse voltage of 0.66V, and graphene/n-Ge Schottky PDs with maximized responsivity/NEP ratio with responsivity and NEP of 227mA/W and 31pW/sqrt(Hz) at 2μm. Overall, this manuscript is organized well and the descriptions are clear. It should be considered published with some discussion included:

 

  1. Based on the authors’ prediction, what are the biggest differences between the graphene/n-Si, graphene/n-Ge, and the current NIR photon detector with Si or Ge?
  2. Can this mathematical framework predict the charge transfer efficiency in graphene/semiconductor junction?
  3. How sensitivity of the parameters considered in this equation? How would the graphene optical absorbance, graphene circular area, loading resistance, or temperature influence the NEP value or response wavelength?

 

 

Author Response

Point-by-point response is in the uploaded file.

Author Response File: Author Response.pdf

Reviewer 2 Report

In this paper, the authors reported the investigation of semiconductor performance at room temperature. This is a very interesting topic. The content of this paper is OK. However, the discussions are not clear to the reviewer. The comments of this review are given below:

  1. The language of this paper is not acceptable. Please have this paper for English proofreading. For example, in line 221, the author used finally. In line 222, the author used furthermore. In line 224, the author used finally again. This is not acceptable. Because when you use finally, it means that this is the end of your statement. How would you continue the discussion?
  2. Please change the texts in figure 1. They are so small that it’s very hard to read. The same problem for figure 3. In figure 4, it’s possible, please replot the figure. The legend blocked the curve.
  3. In line 97, the sentence is weird. What does ‘SLG thanks to’ mean? The same problem at line 168.
  4. The result and discussion part need to be elaborate more clearly.

Author Response

Point-by-point response is in the uploaded file.

Author Response File: Author Response.pdf

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