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Open AccessArticle

Hybrid CMP Slurry Supply System Using Ionization and Atomization

1
School of Mechanical Engineering, Pusan National University, Geumjeong-gu, Busan 46241, Korea
2
Samsung Electro-Mechanics, Gangseo-gu, Busan 46754, Korea
3
Department of Mechanical Engineering, Dong-A University, Saha-gu, Busan 49315, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Miguel R. Oliveira Panão
Appl. Sci. 2021, 11(5), 2217; https://doi.org/10.3390/app11052217
Received: 2 February 2021 / Revised: 16 February 2021 / Accepted: 19 February 2021 / Published: 3 March 2021
(This article belongs to the Special Issue Chemical Mechanical Polishing and Grinding)
Chemical mechanical planarization (CMP) is frequently used in semiconductor manufacturing to polish the surfaces of multiple layers in a wafer. The CMP uses a slurry that aids in fabricating a smooth surface by removing the excess materials. However, excessive use of slurry affects the environment and is expensive. Therefore, we propose a hybrid slurry supply system that combines ionization and atomization to reduce slurry consumption and improve the polishing quality. The proposed hybrid system atomizes the ionized slurry using electrolysis and a spray slurry nozzle. We compared the material removal rate (MRR) and polishing uniformity based on the slurry supply systems used in Cu and SiO2 non-patterned wafers. Additionally, the step height reduction and dishing were compared in the Cu-patterned wafers. The experimental analysis using the hybrid system confirmed a 23% and 25% improvement in the MRR and uniformity, respectively, in comparison with the conventional slurry supply system. This improvement can be attributed to the chemical activation and uniform supply of the ionized and atomized slurries, respectively. Moreover, a significant reduction was observed in dishing and pitch-size dependence. Furthermore, the proposed system prevents heat accumulation between the CMP processes, serving as a cooling system. View Full-Text
Keywords: CMP; chemical mechanical planarization; hybrid; slurry supply system; ionization; atomization; material removal rate (MRR); uniformity CMP; chemical mechanical planarization; hybrid; slurry supply system; ionization; atomization; material removal rate (MRR); uniformity
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MDPI and ACS Style

Jo, H.; Lee, D.S.; Jeong, S.H.; Lee, H.S.; Jeong, H.D. Hybrid CMP Slurry Supply System Using Ionization and Atomization. Appl. Sci. 2021, 11, 2217. https://doi.org/10.3390/app11052217

AMA Style

Jo H, Lee DS, Jeong SH, Lee HS, Jeong HD. Hybrid CMP Slurry Supply System Using Ionization and Atomization. Applied Sciences. 2021; 11(5):2217. https://doi.org/10.3390/app11052217

Chicago/Turabian Style

Jo, Hoseong; Lee, Da S.; Jeong, Seon H.; Lee, Hyun S.; Jeong, Hae D. 2021. "Hybrid CMP Slurry Supply System Using Ionization and Atomization" Appl. Sci. 11, no. 5: 2217. https://doi.org/10.3390/app11052217

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