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Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass

1
Department of Electrical Engineering, Kun Shan University, No.195, Kunda Road, Yong-kang District, Tainan City 71070, Taiwan
2
Green Energy Technology Research Center, Kun Shan University, No.195, Kunda Road, Yong-kang District, Tainan City 71070, Taiwan
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(6), 310; https://doi.org/10.3390/cryst9060310
Received: 28 May 2019 / Revised: 11 June 2019 / Accepted: 13 June 2019 / Published: 17 June 2019
(This article belongs to the Special Issue Functional Oxide Based Thin-Film Materials)
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Abstract

Low emissivity glass (low-e glass), which is often used in energy-saving buildings, has high thermal resistance and visible light transmission. Heavily doped wide band gap semiconductors like aluminum-doped zinc oxide (AZO) and tin-doped indium oxide (ITO) have these properties, especially after certain treatment. In our experiments, in-line sputtered AZO and ITO bilayer (AZO/ITO) films on glass substrates were prepared first. The deposition of AZO/ITO films was following by annealing in hydrogen/nitrogen (H2/N2) plasma with different N2 flows. The structure and optical and electrical properties of AZO/ITO films were surveyed. Experiment results indicated that N2 flow in H2/N2 plasma annealing of AZO/ITO films slightly modified the structure and electrical properties of AZO/ITO films. The X-ray diffraction peak corresponding to zinc oxide (002) crystal plane slightly shifted to a higher angle and its full width at half maximum decreased as the N2 flow increased. The electrical resistivity and the emissivity reduced for the plasma annealed AZO/ITO films when the N2 flow was raised. The optimum H2/N2 gas flow was 100/100 for plasma annealed AZO/ITO films in this work for low emissivity application. The emissivity and average visible transmittance for H2/N2 = 100/100 plasma annealed AZO/ITO were 0.07 and 80%, respectively, lying in the range of commercially used low emissivity glass. View Full-Text
Keywords: H2/N2 plasma; AZO/ITO; low emissivity glass H2/N2 plasma; AZO/ITO; low emissivity glass
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Chang, S.-C.; Chan, H.-T. Effect of Nitrogen Flow in Hydrogen/Nitrogen Plasma Annealing on Aluminum-Doped Zinc Oxide/Tin-Doped Indium Oxide Bilayer Films Applied in Low Emissivity Glass. Crystals 2019, 9, 310.

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