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Open AccessArticle

Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates

Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan City 71005, Taiwan
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Crystals 2019, 9(12), 677; https://doi.org/10.3390/cryst9120677
Received: 14 October 2019 / Revised: 13 November 2019 / Accepted: 13 December 2019 / Published: 17 December 2019
(This article belongs to the Special Issue Recent Advances in Light-Emitting Diodes (LEDs))
In this study, GaN-based blue InGaN/GaN light-emitting diodes (LEDs) with different growth rates of the quantum barriers were fabricated and investigated. The LEDs with quantum barriers grown with a higher growth rate exhibit a lower leakage current and less non-radiative recombination centers in the multiple quantum wells (MQWs). Therefore, the LED with a higher barrier growth rate achieves a better light output power by 18.4% at 120 mA, which is attributed to weaker indium fluctuation effect in the QWs. On the other hand, the localized states created by indium fluctuation lead to a higher local carrier density, and Auger recombination in the QWs. Thus, the efficiency droop ratio of the LEDs with a higher barrier growth rate was only 28.6%, which was superior to that with a lower barrier growth rate (39.3%). View Full-Text
Keywords: efficiency droop; nitride-based LEDs; quantum barrier; and growth rate efficiency droop; nitride-based LEDs; quantum barrier; and growth rate
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Wang, C.K.; Chiou, Y.Z.; Chang, H.J. Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates. Crystals 2019, 9, 677.

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