Next Article in Journal
Theoretical Study of the Electronic, Magnetic, Mechanical and Thermodynamic Properties of the Spin Gapless Semiconductor CoFeMnSi
Previous Article in Journal
Oxidation of High Yield Strength Metals Tungsten and Rhenium in High-Pressure High-Temperature Experiments of Carbon Dioxide and Carbonates
Previous Article in Special Issue
Research on Luminance Distributions of Chip-On-Board Light-Emitting Diodes
 
 
Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
Journals
Crystals
Volume 9
Issue 12
10.3390/cryst9120677
crystals-logo
Submit to this Journal Review for this Journal Propose a Special Issue
► Article Menu

Article Menu

share Share announcement Help format_quote Cite question_answer Discuss in SciProfiles
first_page
settings
Order Article Reprints
Font Type:
Arial Georgia Verdana
Font Size:
Aa Aa Aa
Line Spacing:
Column Width:
Background:
Article

Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates

by
C. K. Wang
*,
Y. Z. Chiou
and
H. J. Chang
Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan City 71005, Taiwan
*
Author to whom correspondence should be addressed.
Crystals 2019, 9(12), 677; https://doi.org/10.3390/cryst9120677
Submission received: 14 October 2019 / Revised: 13 November 2019 / Accepted: 13 December 2019 / Published: 17 December 2019
(This article belongs to the Special Issue Recent Advances in Light-Emitting Diodes (LEDs))
Browse Figures
Versions Notes

Abstract

In this study, GaN-based blue InGaN/GaN light-emitting diodes (LEDs) with different growth rates of the quantum barriers were fabricated and investigated. The LEDs with quantum barriers grown with a higher growth rate exhibit a lower leakage current and less non-radiative recombination centers in the multiple quantum wells (MQWs). Therefore, the LED with a higher barrier growth rate achieves a better light output power by 18.4% at 120 mA, which is attributed to weaker indium fluctuation effect in the QWs. On the other hand, the localized states created by indium fluctuation lead to a higher local carrier density, and Auger recombination in the QWs. Thus, the efficiency droop ratio of the LEDs with a higher barrier growth rate was only 28.6%, which was superior to that with a lower barrier growth rate (39.3%).
Keywords: efficiency droop; nitride-based LEDs; quantum barrier; and growth rate efficiency droop; nitride-based LEDs; quantum barrier; and growth rate

Share and Cite

MDPI and ACS Style

Wang, C.K.; Chiou, Y.Z.; Chang, H.J. Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates. Crystals 2019, 9, 677. https://doi.org/10.3390/cryst9120677

AMA Style

Wang CK, Chiou YZ, Chang HJ. Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates. Crystals. 2019; 9(12):677. https://doi.org/10.3390/cryst9120677

Chicago/Turabian Style

Wang, C. K., Y. Z. Chiou, and H. J. Chang. 2019. "Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates" Crystals 9, no. 12: 677. https://doi.org/10.3390/cryst9120677

APA Style

Wang, C. K., Chiou, Y. Z., & Chang, H. J. (2019). Investigating the Efficiency Droop of Nitride-Based Blue LEDs with Different Quantum Barrier Growth Rates. Crystals, 9(12), 677. https://doi.org/10.3390/cryst9120677

Note that from the first issue of 2016, this journal uses article numbers instead of page numbers. See further details here.

Article Metrics

Back to TopTop