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Open AccessArticle

Ambipolar Transport in Methylammonium Lead Iodide Thin Film Transistors

Department of Information Display, Kyung Hee University, Seoul 130-701, Korea
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Crystals 2019, 9(10), 539; https://doi.org/10.3390/cryst9100539
Received: 15 September 2019 / Revised: 17 October 2019 / Accepted: 17 October 2019 / Published: 19 October 2019
(This article belongs to the Special Issue Advances in Thin Film Materials and Devices)
We report clear room temperature ambipolar transport in ambient-air processed methylammonium lead iodide (MAPbI3) thin-film transistors (TFTs) with aluminum oxide gate-insulators and indium-zinc-oxide source/drain electrodes. The high ionicity of the MAPbI3 leads to p-type and n-type self-doping, and depending on the applied bias we show that simultaneous or selective transport of electrons and/or holes is possible in a single MAPbI3 TFT. The electron transport (n-type), however, is slightly more pronounced than the hole transport (p-type), and the respective channel resistances range from 5–11 and 44–55 MΩ/μm. Both p-type and n-type TFTs show good on-state characteristics for low driving voltages. It is also shown here that the on-state current of the n-type and p-type TFTs is highest in the slightly PbI2-rich and MAI-rich films, respectively, suggesting controllable n-type or p-type transport by varying precursor ratio. View Full-Text
Keywords: Ambipolar transport; lead iodide; methylammonium; organic-inorganic hybrid; perovskite; thin film transistor Ambipolar transport; lead iodide; methylammonium; organic-inorganic hybrid; perovskite; thin film transistor
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MDPI and ACS Style

Ji, J.; Haque, F.; Hoang, N.T.T.; Mativenga, M. Ambipolar Transport in Methylammonium Lead Iodide Thin Film Transistors. Crystals 2019, 9, 539.

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