Growth of Ordered Graphene Ribbons by Sublimation Epitaxy
AbstractOrdered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). SEM showed that there were gray and dark ribbons on the substrate surface, and AFM further revealed that these ordered graphene ribbons had clear stepped morphologies due to surface step-bunching. It was shown by μ-Raman that the numbers of graphene layers of these two types of regions were different. The gray region was composed of mono- or bilayer ordered graphene ribbon, while the dark region was of tri- or few-layer ribbon. Meanwhile, ribbons were all homogeneous and had a width up to 40 μm and a length up to 1000 μm, without micro defects such as grain boundaries, ridges, or mono- and few-layer graphene mixtures. The results of this study are useful for optimized growth of high-quality graphene film on silicon carbide crystal. View Full-Text
- Supplementary File 1:
PDF-Document (PDF, 1304 KB)
Share & Cite This Article
Cai, S.; Liu, X.; Zheng, X.; Liu, Z. Growth of Ordered Graphene Ribbons by Sublimation Epitaxy. Crystals 2018, 8, 449.
Cai S, Liu X, Zheng X, Liu Z. Growth of Ordered Graphene Ribbons by Sublimation Epitaxy. Crystals. 2018; 8(12):449.Chicago/Turabian Style
Cai, Shuxian; Liu, Xingfang; Zheng, Xin; Liu, Zhonghua. 2018. "Growth of Ordered Graphene Ribbons by Sublimation Epitaxy." Crystals 8, no. 12: 449.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.