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Crystals 2018, 8(11), 420; https://doi.org/10.3390/cryst8110420

Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

1
Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
2
Department of Electro-Optical Engineering, National United University, 2, Lienda, Miaoli 26063, Taiwan
*
Authors to whom correspondence should be addressed.
Received: 23 September 2018 / Revised: 29 October 2018 / Accepted: 5 November 2018 / Published: 8 November 2018
(This article belongs to the Special Issue GaN-Based Optoelectronic Materials and Light Emitting Devices)
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Abstract

To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall. View Full-Text
Keywords: light emitting diode; deep-ultraviolet light-emitting diode; reflector inclined plane; metal diameter of cavity bottom light emitting diode; deep-ultraviolet light-emitting diode; reflector inclined plane; metal diameter of cavity bottom
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Pai, Y.-M.; Lin, C.-H.; Lee, C.-F.; Lin, C.-P.; Chen, C.-H.; Kuo, H.-C.; Ye, Z.-T. Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall. Crystals 2018, 8, 420.

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