Wang, G.; Li, Y.; Kirch, J.; Han, Y.; Chen, J.; Marks, S.; Mukhopadhyay, S.; Liu, R.; Liu, C.; Evans, P.G.;
et al. MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity. Crystals 2023, 13, 446.
https://doi.org/10.3390/cryst13030446
AMA Style
Wang G, Li Y, Kirch J, Han Y, Chen J, Marks S, Mukhopadhyay S, Liu R, Liu C, Evans PG,
et al. MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity. Crystals. 2023; 13(3):446.
https://doi.org/10.3390/cryst13030446
Chicago/Turabian Style
Wang, Guangying, Yuting Li, Jeremy Kirch, Yizhou Han, Jiahao Chen, Samuel Marks, Swarnav Mukhopadhyay, Rui Liu, Cheng Liu, Paul G. Evans,
and et al. 2023. "MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity" Crystals 13, no. 3: 446.
https://doi.org/10.3390/cryst13030446
APA Style
Wang, G., Li, Y., Kirch, J., Han, Y., Chen, J., Marks, S., Mukhopadhyay, S., Liu, R., Liu, C., Evans, P. G., & Pasayat, S. S.
(2023). MOCVD of InGaN on ScAlMgO4 on Al2O3 Substrates with Improved Surface Morphology and Crystallinity. Crystals, 13(3), 446.
https://doi.org/10.3390/cryst13030446