Article Versions Notes

Shen Y, Ma H-P, Wang Z-Y, Gu L, Zhang J, Li A, Yang M-Y, Zhang Q-C. Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga₂O₃ Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition. Crystals. 2023; 13(2):301. https://doi.org/10.3390/cryst13020301

Shen, Yi, Hong-Ping Ma, Zhen-Yu Wang, Lin Gu, Jie Zhang, Ao Li, Ming-Yang Yang, and Qing-Chun Zhang. 2023. "Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga₂O₃ Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition" Crystals 13, no. 2: 301. https://doi.org/10.3390/cryst13020301

Shen, Y., Ma, H.-P., Wang, Z.-Y., Gu, L., Zhang, J., Li, A., Yang, M.-Y., & Zhang, Q.-C. (2023). Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga₂O₃ Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition. Crystals, 13(2), 301. https://doi.org/10.3390/cryst13020301