Tang, Z.; Gu, L.; Ma, H.; Mao, C.; Wu, S.; Zhang, N.; Huang, J.; Fan, J.
Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates. Crystals 2023, 13, 62.
https://doi.org/10.3390/cryst13010062
AMA Style
Tang Z, Gu L, Ma H, Mao C, Wu S, Zhang N, Huang J, Fan J.
Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates. Crystals. 2023; 13(1):62.
https://doi.org/10.3390/cryst13010062
Chicago/Turabian Style
Tang, Zhuorui, Lin Gu, Hongping Ma, Chaobin Mao, Sanzhong Wu, Nan Zhang, Jiyu Huang, and Jiajie Fan.
2023. "Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates" Crystals 13, no. 1: 62.
https://doi.org/10.3390/cryst13010062
APA Style
Tang, Z., Gu, L., Ma, H., Mao, C., Wu, S., Zhang, N., Huang, J., & Fan, J.
(2023). Influence of Temperature and Flow Ratio on the Morphology and Uniformity of 4H-SiC Epitaxial Layers Growth on 150 mm 4° Off-Axis Substrates. Crystals, 13(1), 62.
https://doi.org/10.3390/cryst13010062
