Wang, M.-C.;                     Hsieh, W.-C.;                     Lin, C.-R.;                     Chu, W.-L.;                     Liao, W.-S.;                     Lan, W.-H.    
        High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals 2021, 11, 262.
    https://doi.org/10.3390/cryst11030262
    AMA Style
    
                                Wang M-C,                                 Hsieh W-C,                                 Lin C-R,                                 Chu W-L,                                 Liao W-S,                                 Lan W-H.        
                High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals. 2021; 11(3):262.
        https://doi.org/10.3390/cryst11030262
    
    Chicago/Turabian Style
    
                                Wang, Mu-Chun,                                 Wen-Ching Hsieh,                                 Chii-Ruey Lin,                                 Wei-Lun Chu,                                 Wen-Shiang Liao,                                 and Wen-How Lan.        
                2021. "High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs" Crystals 11, no. 3: 262.
        https://doi.org/10.3390/cryst11030262
    
    APA Style
    
                                Wang, M.-C.,                                 Hsieh, W.-C.,                                 Lin, C.-R.,                                 Chu, W.-L.,                                 Liao, W.-S.,                                 & Lan, W.-H.        
        
        (2021). High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals, 11(3), 262.
        https://doi.org/10.3390/cryst11030262