Wang, M.-C.; Hsieh, W.-C.; Lin, C.-R.; Chu, W.-L.; Liao, W.-S.; Lan, W.-H.
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals 2021, 11, 262.
https://doi.org/10.3390/cryst11030262
AMA Style
Wang M-C, Hsieh W-C, Lin C-R, Chu W-L, Liao W-S, Lan W-H.
High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals. 2021; 11(3):262.
https://doi.org/10.3390/cryst11030262
Chicago/Turabian Style
Wang, Mu-Chun, Wen-Ching Hsieh, Chii-Ruey Lin, Wei-Lun Chu, Wen-Shiang Liao, and Wen-How Lan.
2021. "High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs" Crystals 11, no. 3: 262.
https://doi.org/10.3390/cryst11030262
APA Style
Wang, M.-C., Hsieh, W.-C., Lin, C.-R., Chu, W.-L., Liao, W.-S., & Lan, W.-H.
(2021). High-Drain Field Impacting Channel-Length Modulation Effect for Nano-Node N-Channel FinFETs. Crystals, 11(3), 262.
https://doi.org/10.3390/cryst11030262