Article Versions Notes

Curran A, Gocalinska A, Pescaglini A, Secco E, Mura E, Thomas K, Nagle RE, Sheehan B, Povey IM, Pelucchi E, et al. Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C. Crystals. 2021; 11(2):160. https://doi.org/10.3390/cryst11020160

Curran, Anya, Agnieszka Gocalinska, Andrea Pescaglini, Eleonora Secco, Enrica Mura, Kevin Thomas, Roger E. Nagle, Brendan Sheehan, Ian M. Povey, Emanuele Pelucchi, and et al. 2021. "Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C" Crystals 11, no. 2: 160. https://doi.org/10.3390/cryst11020160

Curran, A., Gocalinska, A., Pescaglini, A., Secco, E., Mura, E., Thomas, K., Nagle, R. E., Sheehan, B., Povey, I. M., Pelucchi, E., O’Dwyer, C., Hurley, P. K., & Gity, F. (2021). Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C. Crystals, 11(2), 160. https://doi.org/10.3390/cryst11020160