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Journal: Crystals, 2021
Volume: 11
Number: 1462

Article: Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction
Authors: by Jinfu Lin, Hongxia Liu, Shulong Wang and Siyu Zhang
Link: https://www.mdpi.com/2073-4352/11/12/1462

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