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Article

Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction

by
Jinfu Lin
†,
Hongxia Liu
*,
Shulong Wang
and
Siyu Zhang
†
Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi’an 710071, China
*
Author to whom correspondence should be addressed.
†
Jinfu Lin and Siyu Zhang contributed equally to this work.
Crystals 2021, 11(12), 1462; https://doi.org/10.3390/cryst11121462
Submission received: 31 October 2021 / Revised: 20 November 2021 / Accepted: 24 November 2021 / Published: 26 November 2021
(This article belongs to the Special Issue Multiferroic Ceramics and Thin Film Nanostructures for Logic and Memory Applications)
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Abstract

The resistive memory has become one of the most promising new memory types because of its excellent performance, and HfO2 resistive material has attracted extensive attention. The conduction mechanism based on oxygen vacancy is widely recognized in the research of new nonvolatile memory. An RRAM electrothermal coupling model based on the oxygen vacancy conduction mechanism was constructed using COMSOL. The resistance process of the device is simulated by solving the coefficient partial differential equation, and the distribution of oxygen vacancy concentration, temperature, electric field, electric potential and other parameters in the dielectric layer at different voltages are obtained. The effects of temperature, dielectric layer thickness, top electrode thermal conductivity and conductive wire size on the resistance characteristics of the device are studied. It has guiding significance to further study the RRAM mechanism.
Keywords: resistive random access memory (RRAM); HfO2; electro-thermal coupling modeling resistive random access memory (RRAM); HfO2; electro-thermal coupling modeling

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MDPI and ACS Style

Lin, J.; Liu, H.; Wang, S.; Zhang, S. Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction. Crystals 2021, 11, 1462. https://doi.org/10.3390/cryst11121462

AMA Style

Lin J, Liu H, Wang S, Zhang S. Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction. Crystals. 2021; 11(12):1462. https://doi.org/10.3390/cryst11121462

Chicago/Turabian Style

Lin, Jinfu, Hongxia Liu, Shulong Wang, and Siyu Zhang. 2021. "Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction" Crystals 11, no. 12: 1462. https://doi.org/10.3390/cryst11121462

APA Style

Lin, J., Liu, H., Wang, S., & Zhang, S. (2021). Modeling and Simulation of Hafnium Oxide RRAM Based on Oxygen Vacancy Conduction. Crystals, 11(12), 1462. https://doi.org/10.3390/cryst11121462

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