Article Versions Notes

Ho W-C, Liu Y-H, Wu W-H, Huang Chen S-W, Tzou J, Kuo H-C, Sun C-W. The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure. Crystals. 2020; 10(8):712. https://doi.org/10.3390/cryst10080712

Ho, Wen-Chieh, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, and Chia-Wei Sun. 2020. "The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure" Crystals 10, no. 8: 712. https://doi.org/10.3390/cryst10080712

Ho, W.-C., Liu, Y.-H., Wu, W.-H., Huang Chen, S.-W., Tzou, J., Kuo, H.-C., & Sun, C.-W. (2020). The Study of High Breakdown Voltage Vertical GaN-on-GaN p-i-n Diode with Modified Mesa Structure. Crystals, 10(8), 712. https://doi.org/10.3390/cryst10080712