Next Article in Journal
Fabrication, Experiments, and Analysis of an LBM Additive-Manufactured Flexure Parallel Mechanism
Next Article in Special Issue
An Improved UU-MESFET with High Power Added Efficiency
Previous Article in Journal
Reduction of Parasitic Capacitance of A PDMS Capacitive Force Sensor
Previous Article in Special Issue
AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
Article Menu

Export Article

Open AccessArticle
Micromachines 2018, 9(11), 571; https://doi.org/10.3390/mi9110571

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs

School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, China
*
Author to whom correspondence should be addressed.
Received: 26 September 2018 / Revised: 28 October 2018 / Accepted: 2 November 2018 / Published: 5 November 2018
(This article belongs to the Special Issue Wide Bandgap Semiconductor Based Micro/Nano Devices)
Full-Text   |   PDF [4027 KB, uploaded 5 November 2018]   |  

Abstract

The effect brought by the I–V kink effect on large signal performance of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated in this paper. An improved compact model was proposed to accurately characterize the I–V kink effect. The bias dependence of the I–V kink effect has also been taken into consideration. AlGaN/GaN HEMTs with different gate width were utilized to validate the proposed model. Built on the proposed model, the effect brought by the I–V kink effect on large signal performance has been studied. Results show that the I–V kink effect will lead to the degradation of characteristics, including output power, gain, and power-added efficiency at the saturation region. Furthermore, the influence of the I–V kink effect was found to be related with the input power and the static bias point in this work. The time domain waveform and AC dynamic load line were used for validation of results based on simulation. The consequences of this paper will be useful for the optimization of practical circuit design. View Full-Text
Keywords: I–V kink effect; AlGaN/GaN HEMT; large signal performance I–V kink effect; AlGaN/GaN HEMT; large signal performance
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Mao, S.; Xu, Y. Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs. Micromachines 2018, 9, 571.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Micromachines EISSN 2072-666X Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top