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Journal: Micromachines, 2018
Volume: 9
Number: 546
546
Article: AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
Authors: by Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube and Marek Wzorek
Link: https://www.mdpi.com/2072-666X/9/11/546

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