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Micromachines 2017, 8(4), 117;

Microplasma Field Effect Transistors

Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA
Technology and Manufacturing Group, Intel Corporation, Hillsboro, OR 97124, USA
Author to whom correspondence should be addressed.
Academic Editor: Joost Lötters
Received: 16 February 2017 / Revised: 10 March 2017 / Accepted: 21 March 2017 / Published: 5 April 2017
(This article belongs to the Special Issue Microplasma Devices)
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Micro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here, we review and discuss MPDs with an emphasis on new architectures that have evolved during the past seven years. Devices with programmable impact ionization rates and programmable boundaries are developed to control the plasma ignition voltage and current to achieve power gain. Plasma devices with 1–10 μm gaps are shown to operate in the sub-Paschen regime in atmospheric pressures where ion-assisted field emission results in a breakdown voltage that linearly depends on the gap distance in contrast to the exponential dependence dictated by the Paschen curve. Small gap devices offer higher operation frequencies at low operation voltages with applications in metamaterial skins for energy management and in harsh environment inside nuclear reactors and in space. In addition to analog plasma devices, logic gates, digital circuits, and distributed amplifiers are also discussed. View Full-Text
Keywords: plasma devices; atmospheric-pressure plasmas; glow discharge devices; power amplifiers; terahertz switches plasma devices; atmospheric-pressure plasmas; glow discharge devices; power amplifiers; terahertz switches

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Tabib-Azar, M.; Pai, P. Microplasma Field Effect Transistors. Micromachines 2017, 8, 117.

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