Duan, X.; Lu, C.; Chuai, X.; Chen, Q.; Yang, G.; Geng, D.
A Direct n+-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors. Micromachines 2022, 13, 652.
https://doi.org/10.3390/mi13050652
AMA Style
Duan X, Lu C, Chuai X, Chen Q, Yang G, Geng D.
A Direct n+-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors. Micromachines. 2022; 13(5):652.
https://doi.org/10.3390/mi13050652
Chicago/Turabian Style
Duan, Xinlv, Congyan Lu, Xichen Chuai, Qian Chen, Guanhua Yang, and Di Geng.
2022. "A Direct n+-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors" Micromachines 13, no. 5: 652.
https://doi.org/10.3390/mi13050652
APA Style
Duan, X., Lu, C., Chuai, X., Chen, Q., Yang, G., & Geng, D.
(2022). A Direct n+-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors. Micromachines, 13(5), 652.
https://doi.org/10.3390/mi13050652