Wang, H.; Yuan, C.; Xin, Y.; Shi, Y.; Zhong, Y.; Huang, Y.; Lu, G.
Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. Micromachines 2022, 13, 466.
https://doi.org/10.3390/mi13030466
AMA Style
Wang H, Yuan C, Xin Y, Shi Y, Zhong Y, Huang Y, Lu G.
Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. Micromachines. 2022; 13(3):466.
https://doi.org/10.3390/mi13030466
Chicago/Turabian Style
Wang, Hongyue, Chao Yuan, Yajie Xin, Yijun Shi, Yaozong Zhong, Yun Huang, and Guoguang Lu.
2022. "Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy" Micromachines 13, no. 3: 466.
https://doi.org/10.3390/mi13030466
APA Style
Wang, H., Yuan, C., Xin, Y., Shi, Y., Zhong, Y., Huang, Y., & Lu, G.
(2022). Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy. Micromachines, 13(3), 466.
https://doi.org/10.3390/mi13030466
