Article Versions Notes

Dub M, Sai P, Sakowicz M, Janicki L, But DB, Prystawko P, Cywiński G, Knap W, Rumyantsev S. Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics. Micromachines. 2021; 12(6):721. https://doi.org/10.3390/mi12060721

Dub, Maksym, Pavlo Sai, Maciej Sakowicz, Lukasz Janicki, Dmytro B. But, Paweł Prystawko, Grzegorz Cywiński, Wojciech Knap, and Sergey Rumyantsev. 2021. "Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics" Micromachines 12, no. 6: 721. https://doi.org/10.3390/mi12060721

Dub, M., Sai, P., Sakowicz, M., Janicki, L., But, D. B., Prystawko, P., Cywiński, G., Knap, W., & Rumyantsev, S. (2021). Double-Quantum-Well AlGaN/GaN Field Effect Transistors with Top and Back Gates: Electrical and Noise Characteristics. Micromachines, 12(6), 721. https://doi.org/10.3390/mi12060721