Article Versions Notes

Mukherjee K, De Santi C, Buffolo M, Borga M, You S, Geens K, Bakeroot B, Decoutere S, Gerosa A, Meneghesso G, et al. Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p⁺n⁻n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines. 2021; 12(4):445. https://doi.org/10.3390/mi12040445

Mukherjee, Kalparupa, Carlo De Santi, Matteo Buffolo, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Andrea Gerosa, Gaudenzio Meneghesso, and et al. 2021. "Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p⁺n⁻n Diodes: The Road to Reliable Vertical MOSFETs" Micromachines 12, no. 4: 445. https://doi.org/10.3390/mi12040445

Mukherjee, K., De Santi, C., Buffolo, M., Borga, M., You, S., Geens, K., Bakeroot, B., Decoutere, S., Gerosa, A., Meneghesso, G., Zanoni, E., & Meneghini, M. (2021). Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p⁺n⁻n Diodes: The Road to Reliable Vertical MOSFETs. Micromachines, 12(4), 445. https://doi.org/10.3390/mi12040445