Fan, C.-L.; Shang, M.-C.; Li, B.-J.; Lin, Y.-Z.; Wang, S.-J.; Lee, W.-D.
A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme. Materials 2014, 7, 5761-5768.
https://doi.org/10.3390/ma7085761
AMA Style
Fan C-L, Shang M-C, Li B-J, Lin Y-Z, Wang S-J, Lee W-D.
A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme. Materials. 2014; 7(8):5761-5768.
https://doi.org/10.3390/ma7085761
Chicago/Turabian Style
Fan, Ching-Lin, Ming-Chi Shang, Bo-Jyun Li, Yu-Zuo Lin, Shea-Jue Wang, and Win-Der Lee.
2014. "A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme" Materials 7, no. 8: 5761-5768.
https://doi.org/10.3390/ma7085761
APA Style
Fan, C.-L., Shang, M.-C., Li, B.-J., Lin, Y.-Z., Wang, S.-J., & Lee, W.-D.
(2014). A Self-Aligned a-IGZO Thin-Film Transistor Using a New Two-Photo-Mask Process with a Continuous Etching Scheme. Materials, 7(8), 5761-5768.
https://doi.org/10.3390/ma7085761