A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

Sankowska, Iwona; Jasik, Agata; Czuba, Krzysztof; Ratajczak, Jacek; Kozłowski, Paweł; Wzorek, Marek

doi:10.3390/ma14174940

Open AccessArticle

A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

by

Iwona Sankowska

^*

,

Agata Jasik

,

Krzysztof Czuba

,

Jacek Ratajczak

,

Paweł Kozłowski

and

Marek Wzorek

Łukasiewicz Research Network—Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, Poland

^*

Author to whom correspondence should be addressed.

Materials 2021, 14(17), 4940; https://doi.org/10.3390/ma14174940

Submission received: 29 July 2021 / Revised: 19 August 2021 / Accepted: 25 August 2021 / Published: 30 August 2021

(This article belongs to the Special Issue Semiconductor Quantum Wells and Superlattices)

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Abstract

In this paper, the study of defects in InAs/GaSb type-II superlattices using high-resolution an x-ray diffraction method as well as scanning (SEM) and transmission (TEM) electron microscopy is presented. The investigated superlattices had 200 (#SL200), 300 (#SL300), and 400 (#SL400) periods and were grown using molecular beam epitaxy. The growth conditions differed only in growth temperature, which was 370 °C for #SL400 and #SL200, and 390 °C for #SL300. A wings-like diffuse scattering was observed in reciprocal space maps of symmetrical (004) GaSb reflection. The micrometer-sized defect conglomerates comprised of stacking faults, and linear dislocations were revealed by the analysis of diffuse scattering intensity in combination with SEM and TEM imaging. The following defect-related parameters were obtained: (1) integrated diffuse scattering intensity of 0.1480 for #SL400, 0.1208 for #SL300, and 0.0882 for #SL200; (2) defect size: (2.5–3) μm × (2.5–3) μm –#SL400 and #SL200, (3.2–3.4) μm × (3.7–3.9) μm –#SL300; (3) defect diameter: ~1.84 μm –#SL400, ~2.45 μm –#SL300 and ~2.01 μm –#SL200; (4) defect density: 1.42 × 10⁶ cm⁻² –#SL400, 1.01 × 10⁶ cm⁻² –#SL300, 0.51 × 10⁶ cm⁻² –#SL200; (5) diameter of stacking faults: 0.14 μm and 0.13 μm for #SL400 and #SL200, 0.30 μm for #SL300.

Keywords: diffuse scattering; reciprocal space mapping; InAs/GaSb type-II superlattice

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MDPI and ACS Style

Sankowska, I.; Jasik, A.; Czuba, K.; Ratajczak, J.; Kozłowski, P.; Wzorek, M. A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping. Materials 2021, 14, 4940. https://doi.org/10.3390/ma14174940

AMA Style

Sankowska I, Jasik A, Czuba K, Ratajczak J, Kozłowski P, Wzorek M. A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping. Materials. 2021; 14(17):4940. https://doi.org/10.3390/ma14174940

Chicago/Turabian Style

Sankowska, Iwona, Agata Jasik, Krzysztof Czuba, Jacek Ratajczak, Paweł Kozłowski, and Marek Wzorek. 2021. "A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping" Materials 14, no. 17: 4940. https://doi.org/10.3390/ma14174940

APA Style

Sankowska, I., Jasik, A., Czuba, K., Ratajczak, J., Kozłowski, P., & Wzorek, M. (2021). A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping. Materials, 14(17), 4940. https://doi.org/10.3390/ma14174940

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A Study of Defects in InAs/GaSb Type-II Superlattices Using High-Resolution Reciprocal Space Mapping

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