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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications

1
Department of Nano Manufacturing Technology, Korea Institute of Machinery and Materials (KIMM), Daejeon 34103, Korea
2
Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Korea
3
School of Mechanical Engineering, Yonsei University, Seoul 03722, Korea
4
Department of Nano-Mechatronics, University of Science and Technology, Daejeon 34113, Korea
*
Authors to whom correspondence should be addressed.
Materials 2019, 12(1), 137; https://doi.org/10.3390/ma12010137
Received: 6 November 2018 / Revised: 7 December 2018 / Accepted: 29 December 2018 / Published: 3 January 2019
(This article belongs to the Section Thin Films)
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Abstract

The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs. View Full-Text
Keywords: thin-film transistor; tin oxide; aluminum doping; oxide semiconductor; adhesive property thin-film transistor; tin oxide; aluminum doping; oxide semiconductor; adhesive property
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Lee, S.-H.; Kwon, K.; Kim, K.; Yoon, J.S.; Choi, D.-S.; Yoo, Y.; Kim, C.; Kang, S.; Kim, J.H. Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications. Materials 2019, 12, 137.

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