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Open AccessArticle

Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan
Author to whom correspondence should be addressed.
Materials 2018, 11(1), 32;
Received: 30 October 2017 / Revised: 21 December 2017 / Accepted: 21 December 2017 / Published: 26 December 2017
(This article belongs to the Special Issue Selected Papers from IEEE ICICE 2017)
This study investigates the preparation and electrical properties of Al/cobalt-embedded gelatin (CoG)/ indium tin oxide (ITO) resistive switching memories. Co. elements can be uniformly distributed in gelatin without a conventional dispersion procedure, as confirmed through energy dispersive X-ray analyzer and X-ray photoelectron spectroscopy observations. With an appropriate Co. concentration, Co. ions can assist the formation of an interfacial AlOx layer and improve the memory properties. High ON/OFF ratio, good retention capability, and good endurance switching cycles are demonstrated with 1 M Co. concentration, in contrast to 0.5 M and 2 M memory devices. This result can be attributed to the suitable thickness of the interfacial AlOx layer, which acts as an oxygen reservoir and stores and releases oxygen during switching. The Co. element in a solution-processed gelatin matrix has high potential for bio-electronic applications. View Full-Text
Keywords: cobalt; filament; gelatin; resistive memory cobalt; filament; gelatin; resistive memory
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Lee, C.-J.; Chang, Y.-C.; Wang, L.-W.; Wang, Y.-H. Nonvolatile Resistive Switching Memory Utilizing Cobalt Embedded in Gelatin. Materials 2018, 11, 32.

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