Firek, P.; Czerwosz, E.; Wronka, H.; Krawczyk, S.; Kozłowski, M.; Sochacki, M.; Moszczyńska, D.; Szmidt, J.
The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film. Energies 2024, 17, 3261.
https://doi.org/10.3390/en17133261
AMA Style
Firek P, Czerwosz E, Wronka H, Krawczyk S, Kozłowski M, Sochacki M, Moszczyńska D, Szmidt J.
The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film. Energies. 2024; 17(13):3261.
https://doi.org/10.3390/en17133261
Chicago/Turabian Style
Firek, Piotr, Elżbieta Czerwosz, Halina Wronka, Sławomir Krawczyk, Mirosław Kozłowski, Mariusz Sochacki, Dorota Moszczyńska, and Jan Szmidt.
2024. "The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film" Energies 17, no. 13: 3261.
https://doi.org/10.3390/en17133261
APA Style
Firek, P., Czerwosz, E., Wronka, H., Krawczyk, S., Kozłowski, M., Sochacki, M., Moszczyńska, D., & Szmidt, J.
(2024). The Preparation and Properties of a Hydrogen-Sensing Field-Effect Transistor with a Gate of Nanocomposite C-Pd Film. Energies, 17(13), 3261.
https://doi.org/10.3390/en17133261