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Open AccessFeature PaperArticle

A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter

POELSA, Power Electronics System Laboratory, Kookmin University, Seoul 100-011, Korea
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Author to whom correspondence should be addressed.
Energies 2019, 12(16), 3082; https://doi.org/10.3390/en12163082
Received: 16 July 2019 / Revised: 5 August 2019 / Accepted: 6 August 2019 / Published: 9 August 2019
(This article belongs to the Special Issue Advanced in Resonant Converter and Dual Active Bridge Converter)
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Abstract

This paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. It provides a detailed operational analysis of the converter; the multilevel (ML) organization of cells; voltage-balancing principles; current-balancing principles; loss comparison between Si-FETs and gallium-nitride (GaN)-FETs; and an optimal design consideration based on loss analysis. This analysis reveals that the switching losses of all power switches can be considerably reduced as the voltage across each switch can be set to half of the input voltage without an additional circuit or control strategy. Moreover, the current of each resonant inductor is automatically balanced by a proposed integrated magnetic (IM)-coupled inductor. Therefore, the operating frequency can be easily increased to near 1 MHz without applying high-performance switches. In addition, the resonant tanks of the converter can be a group of cells for multilevel operation, which indicates that the voltage across each switch is further reduced as more cells are added. Based on the results of the analysis, an optimal design consideration according to the resonant tank and switching frequency is discussed. The proposed converter was validated via a prototype converter with an input of 390 V, an output of 19.5 V/18 A, and a frequency of 1 MHz. View Full-Text
Keywords: three-level LLC resonant converter; 1 MHz operation; Si-FET; voltage balancing; current balancing; multilevel; voltage stress three-level LLC resonant converter; 1 MHz operation; Si-FET; voltage balancing; current balancing; multilevel; voltage stress
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Yang, J.-W.; Han, S.-K. A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter. Energies 2019, 12, 3082.

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