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Sensors 2009, 9(6), 4455-4464;

A High Isolation Series-Shunt RF MEMS Switch

1,2,3,* , 2,3
Department of Physics, Nanjing University, Nanjing, 210093, China
National Key Lab. of Monolithic Integrated Circuits and Modules, Nanjing, 210016, China
Nanjing Electronic Devices Institute, Nanjing, China
Author to whom correspondence should be addressed.
Received: 13 May 2009 / Revised: 20 May 2009 / Accepted: 22 May 2009 / Published: 5 June 2009
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This paper presents a wide band compact high isolation microelectromechanical systems (MEMS) switch implemented on a coplanar waveguide (CPW) with three ohmic switch cells, which is based on the series-shunt switch design. The ohmic switch shows a low intrinsic loss of 0.1 dB and an isolation of 24.8 dB at 6 GHz. The measured average pull-in voltage is 28 V and switching time is 47 µs. In order to shorten design period of the high isolation switch, a structure-based small-signal model for the 3-port ohmic MEMS switch is developed and parameters are extracted from the measured results. Then a high isolation switch has been developed where each 3-port ohmic MEMS switch is closely located. The agreement of the measured and modeled radio frequency (RF) performance demonstrates the validity of the electrical equivalent model. Measurements of the series-shunt switch indicate an outstanding isolation of more than 40 dB and a low insertion loss of 0.35 dB from DC to 12 GHz with total chip size of 1 mm × 1.2 mm. View Full-Text
Keywords: series-shunt; RF MEMS switch; metal-contact; electrical model series-shunt; RF MEMS switch; metal-contact; electrical model
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Yu, Y.-W.; Zhu, J.; Jia, S.-X.; Shi, Y. A High Isolation Series-Shunt RF MEMS Switch. Sensors 2009, 9, 4455-4464.

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