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Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface

Karpov Research Institute For Physical Chemistry, ul. Vorontsovo Pole 10, 105064 Moscow, Russia
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Sensors 2003, 3(11), 504-508; https://doi.org/10.3390/s3110504
Received: 1 May 2003 / Accepted: 5 October 2003 / Published: 5 December 2003
In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS), which allowed evaluating heterogeneous death-rate of ozone (γ) Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb). View Full-Text
Keywords: semiconductor sensors; heterogeneous death-rate of ozone; Teflon semiconductor sensors; heterogeneous death-rate of ozone; Teflon
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Obvintseva, L.A.; Chibirova, F.K.; Kazakov, S.A.; Avetisov, A.K.; Strobkova, M.V.; Finogenova, N.V. Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface. Sensors 2003, 3, 504-508.

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