Yokoyama, T.; Tsutsui, M.; Nishi, Y.; Noguchi, Y.; Takeuchi, M.; Oda, M.; Amos, F.
Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process. Sensors 2025, 25, 6997.
https://doi.org/10.3390/s25226997
AMA Style
Yokoyama T, Tsutsui M, Nishi Y, Noguchi Y, Takeuchi M, Oda M, Amos F.
Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process. Sensors. 2025; 25(22):6997.
https://doi.org/10.3390/s25226997
Chicago/Turabian Style
Yokoyama, Toshifumi, Masafumi Tsutsui, Yoshiaki Nishi, Yoshihiro Noguchi, Masahiko Takeuchi, Masahiro Oda, and Fenigstein Amos.
2025. "Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process" Sensors 25, no. 22: 6997.
https://doi.org/10.3390/s25226997
APA Style
Yokoyama, T., Tsutsui, M., Nishi, Y., Noguchi, Y., Takeuchi, M., Oda, M., & Amos, F.
(2025). Charge-Domain Type 2.2 µm BSI Global Shutter Pixel with Dual-Depth DTI Produced by Thick-Film Epitaxial Process. Sensors, 25(22), 6997.
https://doi.org/10.3390/s25226997
