Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation
Abstract
:1. Introduction
1.1. Motivation
1.2. Overview of the Topic
1.3. Article Structure
2. SiC MOSFET Switching Loss Evaluation
2.1. Introduction to the Analysis
2.2. Half-Bridge Architecture and Lumped Parasitic Parameters
2.3. Overview of SiC Switching Loss Models
2.4. Simplified Reference Model
2.5. Existing Analytical Model of Similar Complexity
2.6. Fully Analytical Model
2.7. Proposed Analytical Model
2.7.1. Overview and Assumptions of the Proposed Analytical Model
- Parasitic inductances and are neglected. Because bare-die components are employed, typical inductance values of a standard package cannot be used. The overall inductance of the half-bridge could be estimated, but its distribution in every parasitic inductance is rather challenging. Considering that the PCB layout is achieved while trying to minimize these inductances as much as possible and that the highest switching frequency at which the half-bridge is tested is 80 kHz, it is assumed that they do not play a significant role.
- Reverse-recovery losses are neglected. SiC Schottky diodes are placed in anti-parallel to the SiC MOSFETs, and since they manifest a very low reverse-recovery peak current , the assumption is acceptable. The omission of reverse-recovery losses is compelling if SiC Schottky diodes are employed in anti-parallel to SiC MOSFETs. If, instead, body diodes of the SiC MOSFET are used, these losses should be considered. In this case, refs. [16,17] propose an effective way to compute the reverse-recovery losses. Particularly, in [16], a set of formulae is derived from the physical model presented in [27], which could be numerically solved with the Newton–Raphson method.
- Drain-induced Barrier Lowering (DIBL) and the short channel effect are neglected. In the switching process, especially during current rise or fall, depending on which transient, turn-on or turn-off, is considered, the MOSFET operates in the saturation region. During this period of time, when powered by high DC bus voltages, the device experiences the DIBL effect, resulting in an increase in the channel current for a given and in a reduction in the threshold voltage . The complete expression of the channel current would be described by (5), as stated in [12]. With respect to the - characteristic provided by the manufacturers at low and fixed , the real characteristic at higher bus voltages is shifted to the left and expresses a higher slope. Thus, the DIBL effect neglect implies an overestimation of the losses during current rise and fall. However, the estimation of requires an experimental characterization of the device, especially a single-pulse test circuit [11], which would be out of the scope of this paper. The initial estimation of as described in [28] is not possible for most of the SiC MOSFET part numbers, and the relation between and cannot be derived from the datasheet. Therefore, the effect is neglected.
2.7.2. Calculation
2.7.3. Calculation
2.7.4. Universality and Further Discussions on the Proposed Model
2.7.5. Virtual Junction Temperature Estimation
3. Experimental Setup
4. Comparison with the Experiments
- The number of simulation results , which lie in the uncertainty range defined around the measured efficiency.
- The mean absolute error , which represents the average displacement with respect to the measured value (38).
- The mean absolute percentage error , which is the unsigned average displacement normalized over the measured value (39). This error suggests the average displacement with respect to the test itself.
5. Conclusions
6. Future Developments
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
Abbreviations
NAM | Num-analytical model |
FAM | Full analytical model |
Drain source capacitance | |
Gate drain capacitance | |
Gate source capacitance | |
Input capacitance | |
Output capacitance | |
Equivalent output capacitance | |
Algorithm discrete time-step | |
Turn-off losses | |
Falling current contribution to the losses | |
Rising voltage contribution to the losses | |
Turn-on losses | |
Rising current contribution to the losses | |
Falling voltage contribution to the losses | |
MOSFET switching frequency | |
MOSFET channel transconductance | |
Load current | |
MOSFET channel current | |
Drain current | |
Gate turn-on current during Miller’s plateau | |
Gate turn-off current during Miller’s plateau | |
Current through the output capacitance | |
Reverse-recovery current | |
Drain parasitic inductance | |
Source parasitic inductance | |
Equivalent output charge capacitance | |
Turn-on gate resistance | |
Turn-off gate resistance | |
MOSFET on-conduction resistance | |
Silicon carbide | |
Current fall time | |
Voltage fall time | |
Junction temperature | |
Current rise time | |
Voltage rise time | |
DC supply voltage | |
Gate driver supply voltage | |
Drain source voltage | |
MOSFET drain source voltage drop during conduction | |
Miller’s plateau voltage | |
MOSFET threshold voltage | |
Expanded uncertainty | |
Estimated efficiency | |
Mean measured efficiency |
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Model | Advantages | Drawbacks |
---|---|---|
[9] | Very simple to implement | Very inaccurate |
[10] | Formally complete | Discrete accuracy and preliminary tests |
[11,12] | Accurate | Dynamic MOSFET characterization |
[13] | Detailed | Lack of losses |
[14,15,17] | Accurate and complete | Complex and preliminary tests |
[18,19] | Specific | Dynamic extraction |
[16,20,21,22] | Based on datasheet parameters | and approximation, discrete accuracy |
[23,24] | Accurate and based on datasheet parameters | Extremely complex, step approximation of the capacitance and temperature independency |
[V] | Duty [p.u] | Simplified Model [9] [%] | Model in [16] [%] | Model in [24] [%] | Proposed Model [%] | Measured [%] | ||
---|---|---|---|---|---|---|---|---|
400 | 0.2 | 90.78 | 97.37 | 94.93 | 95.54 | 94.57 | 94.87 | 95.16 |
400 | 0.3 | 93.83 | 98.04 | 96.70 | 96.97 | 96.66 | 96.95 | 97.23 |
400 | 0.4 | 95.36 | 98.37 | 97.46 | 97.65 | 97.37 | 97.7 | 98.03 |
400 | 0.5 | 96.31 | 98.62 | 97.94 | 98.09 | 97.65 | 98.12 | 98.58 |
400 | 0.7 | 97.14 | 98.54 | 98.07 | 98.23 | 98.14 | 98.44 | 98.74 |
450 | 0.7 | 96.81 | 98.33 | 97.81 | 98.01 | 97.80 | 98.04 | 98.28 |
500 | 0.3 | 93.35 | 97.73 | 96.60 | 96.83 | 96.80 | 97.02 | 97.24 |
0 | 1 | 5 | 6 | |||||
2.51 | 0.84 | 0.25 | 0.17 | |||||
2.59 | 0.87 | 0.26 | 0.18 | |||||
MMAPE | 2.63 | 0.86 | 0.26 | 0.18 |
[V] | Duty [p.u] | Simplified Model [9] [%] | Model in [16] [%] | Model in [24] [%] | Proposed Model [%] | Measured [%] | ||
---|---|---|---|---|---|---|---|---|
400 | 0.2 | 86.88 | 96.97 | 93.25 | 94.17 | 92.84 | 93.18 | 93.53 |
400 | 0.3 | 91.34 | 97.70 | 95.5 | 96.06 | 95.89 | 96.23 | 96.58 |
400 | 0.4 | 93.64 | 98.14 | 96.71 | 97.02 | 96.9 | 97.31 | 97.72 |
400 | 0.5 | 95.00 | 98.42 | 97.38 | 97.60 | 97.25 | 97.85 | 98.45 |
0 | 1 | 2 | 3 | |||||
4.43 | 1.67 | 0.47 | 0.43 | |||||
4.63 | 1.76 | 0.48 | 0.45 | |||||
MMAPE | 4.75 | 1.73 | 0.48 | 0.45 |
[V] | Duty [p.u] | Simplified Model [9] [%] | Model in [16] [%] | Model in [24] [%] | Proposed Model [%] | Measured [%] | ||
---|---|---|---|---|---|---|---|---|
400 | 0.2 | 82.72 | 96.38 | 91.26 | 92.57 | 91.03 | 91.48 | 91.94 |
400 | 0.3 | 88.86 | 97.37 | 94.32 | 95.14 | 95.03 | 95.44 | 95.84 |
400 | 0.4 | 91.88 | 97.84 | 95.86 | 96.32 | 96.36 | 96.85 | 97.33 |
400 | 0.5 | 93.73 | 98.2 | 96.79 | 97.09 | 96.83 | 97.54 | 98.26 |
400 | 0.7 | 95.75 | 98.30 | 97.33 | 97.7 | 97.34 | 97.65 | 97.96 |
0 | 1 | 1 | 3 | |||||
5.20 | 1.83 | 0.68 | 0.48 | |||||
5.49 | 1.95 | 0.71 | 0.51 | |||||
MMAPE | 5.68 | 1.92 | 0.71 | 0.51 |
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Share and Cite
Bianchini, C.; Vogni, M.; Chini, A.; Franceschini, G. Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. Sensors 2025, 25, 3605. https://doi.org/10.3390/s25123605
Bianchini C, Vogni M, Chini A, Franceschini G. Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. Sensors. 2025; 25(12):3605. https://doi.org/10.3390/s25123605
Chicago/Turabian StyleBianchini, Claudio, Mattia Vogni, Alessandro Chini, and Giovanni Franceschini. 2025. "Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation" Sensors 25, no. 12: 3605. https://doi.org/10.3390/s25123605
APA StyleBianchini, C., Vogni, M., Chini, A., & Franceschini, G. (2025). Switching Loss Model for SiC MOSFETs Based on Datasheet Parameters Enabling Virtual Junction Temperature Estimation. Sensors, 25(12), 3605. https://doi.org/10.3390/s25123605