Kadono, T.; Hirose, R.; Onaka-Masada, A.; Kobayashi, K.; Suzuki, A.; Okuyama, R.; Koga, Y.; Fukuyama, A.; Kurita, K.
Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation. Sensors 2022, 22, 8258.
https://doi.org/10.3390/s22218258
AMA Style
Kadono T, Hirose R, Onaka-Masada A, Kobayashi K, Suzuki A, Okuyama R, Koga Y, Fukuyama A, Kurita K.
Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation. Sensors. 2022; 22(21):8258.
https://doi.org/10.3390/s22218258
Chicago/Turabian Style
Kadono, Takeshi, Ryo Hirose, Ayumi Onaka-Masada, Koji Kobayashi, Akihiro Suzuki, Ryosuke Okuyama, Yoshihiro Koga, Atsuhiko Fukuyama, and Kazunari Kurita.
2022. "Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation" Sensors 22, no. 21: 8258.
https://doi.org/10.3390/s22218258
APA Style
Kadono, T., Hirose, R., Onaka-Masada, A., Kobayashi, K., Suzuki, A., Okuyama, R., Koga, Y., Fukuyama, A., & Kurita, K.
(2022). Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation. Sensors, 22(21), 8258.
https://doi.org/10.3390/s22218258
