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Open AccessArticle

A High Full Well Capacity CMOS Image Sensor for Space Applications

1
School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju 61005, Korea
2
Korea Aerospace Research Institute, Daejeon 34133, Korea
*
Author to whom correspondence should be addressed.
Sensors 2019, 19(7), 1505; https://doi.org/10.3390/s19071505
Received: 24 January 2019 / Revised: 24 March 2019 / Accepted: 26 March 2019 / Published: 28 March 2019
(This article belongs to the Special Issue Advanced CMOS Image Sensors and Emerging Applications)
This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor is integrated in a pixel and accumulated charges in a photodiode are transferred to the in-pixel capacitor multiple times depending on the maximum incident light intensity. In addition, the modulation transfer function (MTF) and radiation damage effect on the pixel, which are especially important for space applications, are studied and analyzed through fabrication of the CIS. The CIS was fabricated using a 0.11 μm 1-poly 4-metal CIS process to demonstrate the proposed techniques and pixel design. A measured FWC of 103,448 electrons and MTF improvement of 300% are achieved with 6.5 μm pixel pitch. View Full-Text
Keywords: CMOS image sensors; wide dynamic range; multiple charge transfer; space applications; radiation damage effects CMOS image sensors; wide dynamic range; multiple charge transfer; space applications; radiation damage effects
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Kim, W.-T.; Park, C.; Lee, H.; Lee, I.; Lee, B.-G. A High Full Well Capacity CMOS Image Sensor for Space Applications. Sensors 2019, 19, 1505.

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