Sacchettini, Y.; Carrère, J.-P.; Duru, R.; Oddou, J.-P.; Goiffon, V.; Magnan, P.
CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current. Sensors 2019, 19, 5534.
https://doi.org/10.3390/s19245534
AMA Style
Sacchettini Y, Carrère J-P, Duru R, Oddou J-P, Goiffon V, Magnan P.
CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current. Sensors. 2019; 19(24):5534.
https://doi.org/10.3390/s19245534
Chicago/Turabian Style
Sacchettini, Yolène, Jean-Pierre Carrère, Romain Duru, Jean-Pierre Oddou, Vincent Goiffon, and Pierre Magnan.
2019. "CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current" Sensors 19, no. 24: 5534.
https://doi.org/10.3390/s19245534
APA Style
Sacchettini, Y., Carrère, J.-P., Duru, R., Oddou, J.-P., Goiffon, V., & Magnan, P.
(2019). CMOS Image Sensors and Plasma Processes: How PMD Nitride Charging Acts on the Dark Current. Sensors, 19(24), 5534.
https://doi.org/10.3390/s19245534