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Open AccessArticle

The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector

1
Nanotechnology and Advanced Materials Program, Kuwait Institute for Scientific Research, Safat 13109, Kuwait
2
Electrical and Computer Engineering, University of California at Davis, Davis, CA 95616, USA
3
The Faculty of Materials Science and Engineering, University of Politehnica of Bucharest, 060042 Bucharest, Romania
*
Author to whom correspondence should be addressed.
Sensors 2019, 19(23), 5301; https://doi.org/10.3390/s19235301
Received: 4 September 2019 / Revised: 25 November 2019 / Accepted: 27 November 2019 / Published: 2 December 2019
We investigated the effect of silver catalysts to enhance the growth of Ga2O3 nanowires. The growth of Ga2O3 nanowires on a P+-Si (100) substrate was demonstrated by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of a thin silver film that serves as a catalyst layer. We present the results of morphological, compositional, and electrical characterization of the Ga2O3 nanowires, including the measurements on photoconductance and transient time. Our results show that highly oriented, dense and long Ga2O3 nanowires can be grown directly on the surface of silicon. The Ga2O3 nanowires, with their inherent n-type characteristics formed a pn heterojunction when grown on silicon. The heterojunction showed rectifying characteristics and excellent UV photoresponse. View Full-Text
Keywords: β-Ga2O3; nanowires; oxidation; silver catalyst; electrical conductivity; photodetector β-Ga2O3; nanowires; oxidation; silver catalyst; electrical conductivity; photodetector
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Alhalaili, B.; Vidu, R.; Islam, M.S. The Growth of Ga2O3 Nanowires on Silicon for Ultraviolet Photodetector. Sensors 2019, 19, 5301.

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