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Sensors 2018, 18(4), 958; https://doi.org/10.3390/s18040958

A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

1
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China
2
International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China
3
Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China
4
Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, BC V5A 1S6, Canada
*
Authors to whom correspondence should be addressed.
Received: 1 February 2018 / Revised: 15 March 2018 / Accepted: 16 March 2018 / Published: 23 March 2018
(This article belongs to the Special Issue Sensors and Materials for Harsh Environments)
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Abstract

An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C. View Full-Text
Keywords: screen printing; thermocouple; Seebeck coefficient; thermoelectric response screen printing; thermocouple; Seebeck coefficient; thermoelectric response
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Liu, Y.; Ren, W.; Shi, P.; Liu, D.; Zhang, Y.; Liu, M.; Ye, Z.-G.; Jing, W.; Tian, B.; Jiang, Z. A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements. Sensors 2018, 18, 958.

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