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An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process
Open AccessArticle

A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection

STMicroelectronics. 850 rue Jean Monnet, 38926 Crolles Cedex. France
Author to whom correspondence should be addressed.
This paper is an expanded version of our published paper: Lalanne, F.; Malinge, P.; Hérault, D.; Jamin-Mornet, C. A Native HDR 115 dB 3.2 m BSI Pixel Using Electron and Hole Collection. In Proceedings of the 2017 International Image Sensor Workshop, Hiroshima, Japan, 30 May–2 June 2017.
Sensors 2018, 18(1), 305;
Received: 1 November 2017 / Revised: 12 January 2018 / Accepted: 14 January 2018 / Published: 20 January 2018
(This article belongs to the Special Issue Special Issue on the 2017 International Image Sensor Workshop (IISW))
Mainly driven by automotive applications, there is an increasing interest in image sensors combining a high dynamic range (HDR) and immunity to the flicker issue. The native HDR pixel concept based on a parallel electron and hole collection for, respectively, a low signal level and a high signal level is particularly well-suited for this performance challenge. The theoretical performance of this pixel is modeled and compared to alternative HDR pixel architectures. This concept is proven with the fabrication of a 3.2 μm pixel in a back-side illuminated (BSI) process including capacitive deep trench isolation (CDTI). The electron-based image uses a standard 4T architecture with a pinned diode and provides state-of-the-art low-light performance, which is not altered by the pixel modifications introduced for the hole collection. The hole-based image reaches 750 kh+ linear storage capability thanks to a 73 fF CDTI capacitor. Both images are taken from the same integration window, so the HDR reconstruction is not only immune to the flicker issue but also to motion artifacts. View Full-Text
Keywords: HDR imaging; CMOS image sensors; outdoor vision HDR imaging; CMOS image sensors; outdoor vision
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Lalanne, F.; Malinge, P.; Hérault, D.; Jamin-Mornet, C.; Virollet, N. A 750 K Photocharge Linear Full Well in a 3.2 μm HDR Pixel with Complementary Carrier Collection. Sensors 2018, 18, 305.

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