Fabrication and Evaluation of a Graphene Oxide-Based Capacitive Humidity Sensor†
AbstractIn this study, a CMOS compatible capacitive humidity sensor structure was designed and fabricated on a 200 mm CMOS BEOL Line. A top Al interconnect layer was used as an electrode with a comb/serpent structure, and graphene oxide (GO) was used as sensing material. XRD analysis was done which shows that GO sensing material has a strong and sharp (002) peak at about 10.278°, whereas graphite has (002) peak at about 26°. Device level CV and IV curves were measured in mini-environments at different relative humidity (RH) level, and saturated salt solutions were used to build these mini-environments. To evaluate the potential value of GO material in humidity sensor applications, a prototype humidity sensor was designed and fabricated by integrating the sensor with a dedicated readout ASIC and display/calibration module. Measurements in different mini-environments show that the GO-based humidity sensor has higher sensitivity, faster recovery time and good linearity performance. Compared with a standard humidity sensor, the measured RH data of our prototype humidity sensor can match well that of the standard product. View Full-Text
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Feng, J.; Kang, X.; Zuo, Q.; Yuan, C.; Wang, W.; Zhao, Y.; Zhu, L.; Lu, H.; Chen, J. Fabrication and Evaluation of a Graphene Oxide-Based Capacitive Humidity Sensor. Sensors 2016, 16, 314.
Feng J, Kang X, Zuo Q, Yuan C, Wang W, Zhao Y, Zhu L, Lu H, Chen J. Fabrication and Evaluation of a Graphene Oxide-Based Capacitive Humidity Sensor. Sensors. 2016; 16(3):314.Chicago/Turabian Style
Feng, Jinfeng; Kang, Xiaoxu; Zuo, Qingyun; Yuan, Chao; Wang, Weijun; Zhao, Yuhang; Zhu, Limin; Lu, Hanwei; Chen, Juying. 2016. "Fabrication and Evaluation of a Graphene Oxide-Based Capacitive Humidity Sensor." Sensors 16, no. 3: 314.
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