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Article

Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems

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Georgia Tech Lorraine, Georgia Tech- Centre National de la Recherche Scientifique (CNRS), Unité Mixte Internationale (UMI 2958), 2-3 rue Marconi, Metz 57070, France
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Peugeot Citroën PSA, 75 Avenue de la Grande Armée, Paris 75116, France
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School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
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Institute d’Electronique, de Microélectronique et de Nanotechnologie, Centre National de Recherche Scientifique (IEMN/CNRS) 8520, Université de Lille Science et technologies, Villeneuve d’Ascq 59652, France
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Université de Lorraine, LMOPS EA 4423, 2 rue E. Belin, 57070 Metz, France
*
Author to whom correspondence should be addressed.
Academic Editor: Hans Peter Lang
Sensors 2016, 16(3), 273; https://doi.org/10.3390/s16030273
Received: 31 December 2015 / Revised: 9 February 2016 / Accepted: 18 February 2016 / Published: 23 February 2016
(This article belongs to the Special Issue I3S 2015 Selected Papers)
We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real time. View Full-Text
Keywords: AlGaN/GaN heterostructure; HEMT transistor; NOx and NH3; automotive exhaust line; gas sensor AlGaN/GaN heterostructure; HEMT transistor; NOx and NH3; automotive exhaust line; gas sensor
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MDPI and ACS Style

Halfaya, Y.; Bishop, C.; Soltani, A.; Sundaram, S.; Aubry, V.; Voss, P.L.; Salvestrini, J.-P.; Ougazzaden, A. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems. Sensors 2016, 16, 273. https://doi.org/10.3390/s16030273

AMA Style

Halfaya Y, Bishop C, Soltani A, Sundaram S, Aubry V, Voss PL, Salvestrini J-P, Ougazzaden A. Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems. Sensors. 2016; 16(3):273. https://doi.org/10.3390/s16030273

Chicago/Turabian Style

Halfaya, Yacine, Chris Bishop, Ali Soltani, Suresh Sundaram, Vincent Aubry, Paul L. Voss, Jean-Paul Salvestrini, and Abdallah Ougazzaden. 2016. "Investigation of the Performance of HEMT-Based NO, NO2 and NH3 Exhaust Gas Sensors for Automotive Antipollution Systems" Sensors 16, no. 3: 273. https://doi.org/10.3390/s16030273

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