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Sensors 2011, 11(7), 6494-6508; https://doi.org/10.3390/s110706494

New Analysis and Design of a RF Rectifier for RFID and Implantable Devices

Department of Electronic Science & Technology, Huazhong University of Science & Technology, Wuhan, 430074, China
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Received: 19 April 2011 / Revised: 19 May 2011 / Accepted: 14 June 2011 / Published: 24 June 2011
(This article belongs to the Section Physical Sensors)
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Abstract

New design and optimization of charge pump rectifiers using diode-connected MOS transistors is presented in this paper. An analysis of the output voltage and Power Conversion Efficiency (PCE) is given to guide and evaluate the new design. A novel diode-connected MOS transistor for UHF rectifiers is presented and optimized, and a high efficiency N-stage charge pump rectifier based on this new diode-connected MOS transistor is designed and fabricated in a SMIC 0.18-μm 2P3M CMOS embedded EEPROM process. The new diode achieves 315 mV turn-on voltage and 415 nA reverse saturation leakage current. Compared with the traditional rectifier, the one based on the proposed diode-connected MOS has higher PCE, higher output voltage and smaller ripple coefficient. When the RF input is a 900-MHz sinusoid signal with the power ranging from −15 dBm to −4 dBm, PCEs of the charge pump rectifier with only 3-stage are more than 30%, and the maximum output voltage is 5.5 V, and its ripple coefficients are less than 1%. Therefore, the rectifier is especially suitableto passive UHF RFID tag IC and implantable devices. View Full-Text
Keywords: radio frequency identification; passive transponders; diode-connected MOS transistor; rectifier; power conversion efficiency radio frequency identification; passive transponders; diode-connected MOS transistor; rectifier; power conversion efficiency
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Liu, D.-S.; Li, F.-B.; Zou, X.-C.; Liu, Y.; Hui, X.-M.; Tao, X.-F. New Analysis and Design of a RF Rectifier for RFID and Implantable Devices. Sensors 2011, 11, 6494-6508.

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