Jiang, S.; Wu, W.-Y.; Ren, F.; Hsu, C.-H.; Zhang, X.; Gao, P.; Wuu, D.-S.; Huang, C.-J.; Lien, S.-Y.; Zhu, W.
Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture. Int. J. Mol. Sci. 2022, 23, 16204.
https://doi.org/10.3390/ijms232416204
AMA Style
Jiang S, Wu W-Y, Ren F, Hsu C-H, Zhang X, Gao P, Wuu D-S, Huang C-J, Lien S-Y, Zhu W.
Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture. International Journal of Molecular Sciences. 2022; 23(24):16204.
https://doi.org/10.3390/ijms232416204
Chicago/Turabian Style
Jiang, Shicong, Wan-Yu Wu, Fangbin Ren, Chia-Hsun Hsu, Xiaoying Zhang, Peng Gao, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, and Wenzhang Zhu.
2022. "Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture" International Journal of Molecular Sciences 23, no. 24: 16204.
https://doi.org/10.3390/ijms232416204
APA Style
Jiang, S., Wu, W.-Y., Ren, F., Hsu, C.-H., Zhang, X., Gao, P., Wuu, D.-S., Huang, C.-J., Lien, S.-Y., & Zhu, W.
(2022). Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture. International Journal of Molecular Sciences, 23(24), 16204.
https://doi.org/10.3390/ijms232416204
