Yang, S.; Park, J.; Cho, Y.; Lee, Y.; Kim, S.
Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. Int. J. Mol. Sci. 2022, 23, 13249.
https://doi.org/10.3390/ijms232113249
AMA Style
Yang S, Park J, Cho Y, Lee Y, Kim S.
Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. International Journal of Molecular Sciences. 2022; 23(21):13249.
https://doi.org/10.3390/ijms232113249
Chicago/Turabian Style
Yang, Seyeong, Jongmin Park, Youngboo Cho, Yunseok Lee, and Sungjun Kim.
2022. "Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process" International Journal of Molecular Sciences 23, no. 21: 13249.
https://doi.org/10.3390/ijms232113249
APA Style
Yang, S., Park, J., Cho, Y., Lee, Y., & Kim, S.
(2022). Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown Process. International Journal of Molecular Sciences, 23(21), 13249.
https://doi.org/10.3390/ijms232113249