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Unusual Quantum Transport Mechanisms in Silicon Nano-Devices

Institute of Photonics and Advanced Sensing and School of Physical Sciences, The University of Adelaide, Adelaide SA 5005, Australia
Entropy 2019, 21(7), 676; https://doi.org/10.3390/e21070676
Received: 23 May 2019 / Revised: 25 June 2019 / Accepted: 9 July 2019 / Published: 11 July 2019
(This article belongs to the Special Issue Quantum Transport in Mesoscopic Systems)
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Abstract

Silicon-based materials have been the leading platforms for the development of classical information science and are now one of the major contenders for future developments in the field of quantum information science. In this short review paper, while discussing only some examples, I will describe how silicon Complementary-Metal-Oxide-Semiconductor (CMOS) compatible materials have been able to provide platforms for the observation of some of the most unusual transport phenomena in condensed matter physics. View Full-Text
Keywords: mesoscale and nanoscale physics; Complementary Metal Oxide Semiconductor (CMOS) technology; quantum transport mesoscale and nanoscale physics; Complementary Metal Oxide Semiconductor (CMOS) technology; quantum transport
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Tettamanzi, G.C. Unusual Quantum Transport Mechanisms in Silicon Nano-Devices. Entropy 2019, 21, 676.

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